1N6073 Microchip Technology
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 48.61 EUR |
| 10+ | 43.57 EUR |
| 25+ | 40.35 EUR |
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Technische Details 1N6073 Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 28pF @ 5V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V.
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Description: DIODE GEN PURP 50V 850MA AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 850mA Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
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