1N6073 Microchip Technology

Description: DIODE GEN PURP 50V 3A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 28pF @ 5V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V.