1N645-1E3 Microchip Technology
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Technische Details 1N645-1E3 Microchip Technology
Description: DIODE GEN PURP 225V 400MA DO35, Packaging: Bag, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 50 nA @ 225 V.
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1N645-1E3 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 225V 400MA DO35Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 225 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 225 V |
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| 1N645-1E3 | Hersteller : Microchip Technology |
Rectifiers 225 V Signal or Computer Diode |
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