1N647-1/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35
Current - Reverse Leakage @ Vr: 50 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 400mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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Technische Details 1N647-1/TR Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35, Current - Reverse Leakage @ Vr: 50 nA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AH (DO-35), Current - Average Rectified (Io): 400mA, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Tape & Reel (TR).
Weitere Produktangebote 1N647-1/TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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1N647-1/TR | Microchip Technology |
 Rectifiers 400 V Signal or Computer Diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N647-1/TR |
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Hersteller: Microchip Technology
Rectifiers 400 V Signal or Computer Diode
Rectifiers 400 V Signal or Computer Diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH