1N647-1E3 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AH (DO-35)
Current - Average Rectified (Io): 400mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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Technische Details 1N647-1E3 Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35, Current - Reverse Leakage @ Vr: 200 nA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-204AH (DO-35), Current - Average Rectified (Io): 400mA, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial, Packaging: Bulk.
Weitere Produktangebote 1N647-1E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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1N6471E3 | Microchip Technology |
Description: DIODE GEN PURP 400V 400MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 200 nA @ 400 V |
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Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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| 1N6471E3 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 400MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Description: DIODE GEN PURP 400V 400MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N647-1E3 |
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Hersteller: Microchip Technology
Rectifiers 400V 400mA Lead-Free Signal or Computer Diode THT
Rectifiers 400V 400mA Lead-Free Signal or Computer Diode THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N6471E3 |
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Hersteller: Microchip Technology
ESD Protection Diodes / TVS Diodes 13.6V Lead-Free Uni-Directional TVS SMT
ESD Protection Diodes / TVS Diodes 13.6V Lead-Free Uni-Directional TVS SMT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH