1N6484-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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Technische Details 1N6484-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 1N6484-E3/96 nach Preis ab 0.31 EUR bis 2.59 EUR
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1N6484-E3/96 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,GL41; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Case: DO213AB; GL41 Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 0.2mA Kind of package: 7 inch reel Quantity in set/package: 1500pcs. |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
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1N6484-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 3440 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6484-E3/96 | Vishay Semiconductors |
Rectifiers 1.0 Amp 1000 Volt |
auf Bestellung 9375 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1N6484-E3/96 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,GL41; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Case: DO213AB; GL41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 0.2mA
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; DO213AB,GL41; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Case: DO213AB; GL41
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 0.2mA
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 217+ | 0.39 EUR |
| 272+ | 0.31 EUR |
| 1N6484-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 3440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 42+ | 0.5 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1N6484-E3/96 |
|
Hersteller: Vishay Semiconductors
Rectifiers 1.0 Amp 1000 Volt
Rectifiers 1.0 Amp 1000 Volt
auf Bestellung 9375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.73 EUR |
| 1500+ | 0.67 EUR |