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1N65G

1N65G UMW

1N65.PDF Hersteller: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 2490 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.26 EUR
25+ 1.18 EUR
100+ 0.94 EUR
250+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
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Technische Details 1N65G UMW

Description: SOT-223 N-CHANNEL POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.

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1N65G 1N65G Hersteller : UMW 1N65.PDF Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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