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1N65G

1N65G UMW

1N65.PDF
Hersteller: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
18+1.19 EUR
25+0.99 EUR
100+0.76 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.51 EUR
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Technische Details 1N65G UMW

Description: SOT-223 N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

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1N65G 1N65G UMW 1N65.PDF Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N65G 1N65.PDF
1N65G
Hersteller: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH