Produkte > UMW > 1N65L
1N65L

1N65L UMW

1N65.PDF
Hersteller: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 2358 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.25 EUR
25+1.04 EUR
100+0.8 EUR
250+0.68 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 1N65L UMW

Description: TO-252 N-CHANNEL POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.

Weitere Produktangebote 1N65L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
1N65L 1N65L UMW 1N65.PDF Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1N65L 1N65.PDF
1N65L
Hersteller: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH