1N6653 Microchip Technology

Description: DIODE GEN PURP 200V 20A TO59, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-59, Current - Average Rectified (Io): 20A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Stud Mount, Package / Case: TO-210AA, TO-59-4, Stud, Packaging: Bulk.