1SS181,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.057 EUR |
| 6000+ | 0.051 EUR |
| 9000+ | 0.049 EUR |
| 15000+ | 0.048 EUR |
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Technische Details 1SS181,LF Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: S-Mini, Current - Average Rectified (Io) (per Diode): 100mA, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 1SS181,LF nach Preis ab 0.052 EUR bis 0.36 EUR
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1SS181,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA S-MINI Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: S-Mini Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 17840 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS181,LF | Toshiba |
Small Signal Switching Diodes Hi Spd Switch Diode 0.1A 80V VR |
auf Bestellung 1111 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1SS181,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 17840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 0.27 EUR |
| 108+ | 0.19 EUR |
| 190+ | 0.11 EUR |
| 500+ | 0.089 EUR |
| 1000+ | 0.083 EUR |
| 1SS181,LF |
|
Hersteller: Toshiba
Small Signal Switching Diodes Hi Spd Switch Diode 0.1A 80V VR
Small Signal Switching Diodes Hi Spd Switch Diode 0.1A 80V VR
auf Bestellung 1111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 3000+ | 0.063 EUR |
| 6000+ | 0.052 EUR |