1SS250(TE85L,F) Toshiba
auf Bestellung 1634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.59 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.11 EUR |
Produktrezensionen
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Technische Details 1SS250(TE85L,F) Toshiba
Description: DIODE GEN PURP 200V 100MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: SC-59, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Weitere Produktangebote 1SS250(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 1SS250(TE85L,F) | Hersteller : TOSHIBA |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Type of diode: switching Case: SOT346 Mounting: SMD Max. off-state voltage: 250V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Reverse recovery time: 60ns Power dissipation: 0.15W Features of semiconductor devices: fast switching Capacitance: 3pF Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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1SS250(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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1SS250(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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| 1SS250(TE85L,F) | Hersteller : TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Type of diode: switching Case: SOT346 Mounting: SMD Max. off-state voltage: 250V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A Reverse recovery time: 60ns Power dissipation: 0.15W Features of semiconductor devices: fast switching Capacitance: 3pF |
Produkt ist nicht verfügbar |