1SS385FV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MAVESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 104+ | 0.17 EUR |
| 146+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.07 EUR |
| 2000+ | 0.063 EUR |
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Technische Details 1SS385FV,L3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MAVESM, Current - Reverse Leakage @ Vr: 20 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA, Voltage - DC Reverse (Vr) (Max): 10 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: VESM, Current - Average Rectified (Io): 100mA, Capacitance @ Vr, F: 20pF @ 0V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote 1SS385FV,L3F nach Preis ab 0.056 EUR bis 0.35 EUR
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1SS385FV,L3F | Hersteller : Toshiba |
Schottky Diodes & Rectifiers RECT 10V .1A SM SCHOTTKY |
auf Bestellung 1608 Stücke: Lieferzeit 10-14 Tag (e) |
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1SS385FV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MAVESMCurrent - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: VESM Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 20pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
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