1SS413CT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.091 EUR |
30000+ | 0.089 EUR |
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Technische Details 1SS413CT,L3F Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA SOD882, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz, Current - Average Rectified (Io): 50mA, Supplier Device Package: CST2, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA, Current - Reverse Leakage @ Vr: 500 nA @ 20 V.
Weitere Produktangebote 1SS413CT,L3F nach Preis ab 0.086 EUR bis 0.7 EUR
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1SS413CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA SOD882 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: CST2 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
auf Bestellung 44880 Stücke: Lieferzeit 21-28 Tag (e) |
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1SS413CT,L3F | Hersteller : Toshiba | Schottky Diodes & Rectifiers Small Sig. Schottky Barrier Diode |
auf Bestellung 51578 Stücke: Lieferzeit 14-28 Tag (e) |
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