1SV277TPH3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE VARICAP VCO UHF USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: USC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
auf Bestellung 1925 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 0.99 EUR |
| 38+ | 0.7 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
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Technische Details 1SV277TPH3F Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO UHF USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Diode Type: Single, Operating Temperature: 125°C (TJ), Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz, Capacitance Ratio Condition: C1/C4, Supplier Device Package: USC, Part Status: Active, Voltage - Peak Reverse (Max): 10 V, Capacitance Ratio: 2.3.
Weitere Produktangebote 1SV277TPH3F nach Preis ab 0.19 EUR bis 0.99 EUR
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1SV277TPH3F | Hersteller : Toshiba |
Varactor Diodes 10V C1=4.0-4.9pF |
auf Bestellung 3148 Stücke: Lieferzeit 14-28 Tag (e) |
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1SV277TPH3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE VARICAP VCO UHF USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: USC Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 2.3 |
Produkt ist nicht verfügbar |