1SV325,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.13 EUR |
| 8000+ | 0.096 EUR |
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Technische Details 1SV325,H3F Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC, Capacitance Ratio: 4.3, Voltage - Peak Reverse (Max): 10 V, Supplier Device Package: ESC, Capacitance Ratio Condition: C1/C4, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Operating Temperature: 125°C (TJ), Diode Type: Single, Mounting Type: Surface Mount, Package / Case: SC-79, SOD-523, Packaging: Tape & Reel (TR).
Weitere Produktangebote 1SV325,H3F nach Preis ab 0.12 EUR bis 0.67 EUR
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1SV325,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V ESC Capacitance Ratio: 4.3 Voltage - Peak Reverse (Max): 10 V Supplier Device Package: ESC Capacitance Ratio Condition: C1/C4 Capacitance @ Vr, F: 12pF @ 4V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
auf Bestellung 10703 Stücke: Lieferzeit 10-14 Tag (e) |
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1SV325,H3F | Hersteller : Toshiba |
Varactor Diodes ESC VARICAP DIODE IR=3nA |
auf Bestellung 1746 Stücke: Lieferzeit 10-14 Tag (e) |
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