1SV325,H3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE VARACTOR 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 3420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 0.62 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.14 EUR |
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Technische Details 1SV325,H3F Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Diode Type: Single, Operating Temperature: 125°C (TJ), Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Capacitance Ratio Condition: C1/C4, Supplier Device Package: ESC, Voltage - Peak Reverse (Max): 10 V, Capacitance Ratio: 4.3.
Weitere Produktangebote 1SV325,H3F nach Preis ab 0.17 EUR bis 0.92 EUR
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1SV325,H3F | Hersteller : Toshiba |
Varactor Diodes ESC VARICAP DIODE IR=3nA |
auf Bestellung 2490 Stücke: Lieferzeit 14-28 Tag (e) |
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1SV325,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 12pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: ESC Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.3 |
Produkt ist nicht verfügbar |