20KPA256A MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE UP 256VRWM 412VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 286V
Voltage - Clamping (Max) @ Ipp: 412V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 19.16 EUR |
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Technische Details 20KPA256A MDE Semiconductor Inc
Category: Unidirectional TVS THT diodes, Description: Diode: TVS; 20kW; 300.3V; 49A; unidirectional; ±5%; P600; reel,tape, Manufacturer series: 20KPA, Mounting: THT, Max. off-state voltage: 256V, Semiconductor structure: unidirectional, Max. forward impulse current: 49A, Breakdown voltage: 300.3V, Leakage current: 2µA, Kind of package: reel; tape, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 20kW, Case: P600, Tolerance: ±5%, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote 20KPA256A
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Preis |
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20KPA256A | Hersteller : LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 20kW; 300.3V; 49A; unidirectional; ±5%; P600; reel,tape Manufacturer series: 20KPA Mounting: THT Max. off-state voltage: 256V Semiconductor structure: unidirectional Max. forward impulse current: 49A Breakdown voltage: 300.3V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 20kW Case: P600 Tolerance: ±5% Anzahl je Verpackung: 800 Stücke |
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20KPA256A | Hersteller : Littelfuse |
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20KPA256A | Hersteller : LITTELFUSE |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 20kW; 300.3V; 49A; unidirectional; ±5%; P600; reel,tape Manufacturer series: 20KPA Mounting: THT Max. off-state voltage: 256V Semiconductor structure: unidirectional Max. forward impulse current: 49A Breakdown voltage: 300.3V Leakage current: 2µA Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 20kW Case: P600 Tolerance: ±5% |
Produkt ist nicht verfügbar |