20KPA52CA-B Littelfuse
| Anzahl | Privatkunde |
|---|---|
| 6+ | 34.46 EUR |
| 10+ | 30.7 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details 20KPA52CA-B Littelfuse
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 61V; 235.4A; bidirectional; ±5%; P600; 20kW; 20KPA; bulk, Type of diode: TVS, Max. off-state voltage: 52V, Semiconductor structure: bidirectional, Case: P600, Mounting: THT, Kind of package: bulk, Peak pulse power dissipation: 20kW, Features of semiconductor devices: glass passivated, Leakage current: 2µA, Tolerance: ±5%, Breakdown voltage: 61V, Manufacturer series: 20KPA, Max. forward impulse current: 235.4A.
Weitere Produktangebote 20KPA52CA-B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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20KPA52CA-B | LITTELFUSE |
 Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 61V; 235.4A; bidirectional; ±5%; P600; 20kW; 20KPA; bulk Type of diode: TVS Max. off-state voltage: 52V Semiconductor structure: bidirectional Case: P600 Mounting: THT Kind of package: bulk Peak pulse power dissipation: 20kW Features of semiconductor devices: glass passivated Leakage current: 2µA Tolerance: ±5% Breakdown voltage: 61V Manufacturer series: 20KPA Max. forward impulse current: 235.4A |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 20KPA52CA-B |
|
Hersteller: LITTELFUSE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 61V; 235.4A; bidirectional; ±5%; P600; 20kW; 20KPA; bulk
Type of diode: TVS
Max. off-state voltage: 52V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: bulk
Peak pulse power dissipation: 20kW
Features of semiconductor devices: glass passivated
Leakage current: 2µA
Tolerance: ±5%
Breakdown voltage: 61V
Manufacturer series: 20KPA
Max. forward impulse current: 235.4A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 61V; 235.4A; bidirectional; ±5%; P600; 20kW; 20KPA; bulk
Type of diode: TVS
Max. off-state voltage: 52V
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Kind of package: bulk
Peak pulse power dissipation: 20kW
Features of semiconductor devices: glass passivated
Leakage current: 2µA
Tolerance: ±5%
Breakdown voltage: 61V
Manufacturer series: 20KPA
Max. forward impulse current: 235.4A
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)