Produkte > GOFORD SEMICONDUCTOR > 2301H

2301H Goford Semiconductor

Name: 2301H
Brand: Goford Semiconductor
SKU: 13716417-3
Price: 17.60 EUR
Availability: InStock

Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)

auf Bestellung 2031 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
40+	0.52 EUR
64+	0.33 EUR
103+	0.2 EUR
500+	0.15 EUR
1000+	0.13 EUR

Mindestbestellmenge: 40 Stücke

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Technische Details 2301H Goford Semiconductor

Description: FIXED IND 10UH 20A 5 MOHM TH, Tolerance: ±15%, Packaging: Bulk, Package / Case: Radial, Horizontal (Open), Size / Dimension: 1.280" Dia (32.51mm), Mounting Type: Through Hole, Shielding: Unshielded, Type: Toroidal, Operating Temperature: -55°C ~ 105°C, DC Resistance (DCR): 5mOhm Max, Material - Core: Iron Powder, Inductance Frequency - Test: 1 kHz, Height - Seated (Max): 0.650" (16.51mm), Inductance: 10 µH, Current Rating (Amps): 20 A.

Weitere Produktangebote 2301H

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Privatkunde
2301-H	Bourns Inc.	Description: FIXED IND 10UH 20A 5 MOHM TH Tolerance: ±15% Packaging: Bulk Package / Case: Radial, Horizontal (Open) Size / Dimension: 1.280" Dia (32.51mm) Mounting Type: Through Hole Shielding: Unshielded Type: Toroidal Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5mOhm Max Material - Core: Iron Powder Inductance Frequency - Test: 1 kHz Height - Seated (Max): 0.650" (16.51mm) Inductance: 10 µH Current Rating (Amps): 20 A	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 72 Stücke Im Einkaufswagen Stück im Wert von UAH
2301H	Goford Semiconductor	Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 890mW (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH
2301H	GOFORD SEMICONDUCTOR	Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.8A; 0.89W; SOT23 Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.8A Gate charge: 4.5nC Power dissipation: 0.89W Gate-source voltage: ±20V Kind of channel: enhancement	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Im Einkaufswagen Stück im Wert von UAH

2301-H

Hersteller: Bourns Inc.
Description: FIXED IND 10UH 20A 5 MOHM TH
Tolerance: ±15%
Packaging: Bulk
Package / Case: Radial, Horizontal (Open)
Size / Dimension: 1.280" Dia (32.51mm)
Mounting Type: Through Hole
Shielding: Unshielded
Type: Toroidal
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 5mOhm Max
Material - Core: Iron Powder
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.650" (16.51mm)
Inductance: 10 µH
Current Rating (Amps): 20 A

Produkt ist nicht verfügbar

Mindestbestellmenge: 72 Stücke

Im Einkaufswagen Stück im Wert von UAH

2301H

Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

2301H

Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.8A; 0.89W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.8A
Gate charge: 4.5nC
Power dissipation: 0.89W
Gate-source voltage: ±20V
Kind of channel: enhancement

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH