2301H Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.073 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details 2301H Goford Semiconductor
Description: FIXED IND 10UH 20A 5 MOHM TH, Tolerance: ±15%, Packaging: Bulk, Package / Case: Radial, Horizontal (Open), Size / Dimension: 1.280" Dia (32.51mm), Mounting Type: Through Hole, Shielding: Unshielded, Type: Toroidal, Operating Temperature: -55°C ~ 105°C, DC Resistance (DCR): 5mOhm Max, Material - Core: Iron Powder, Inductance Frequency - Test: 1 kHz, Height - Seated (Max): 0.650" (16.51mm), Inductance: 10 µH, Current Rating (Amps): 20 A.
Weitere Produktangebote 2301H nach Preis ab 0.049 EUR bis 0.52 EUR
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2301H | Goford Semiconductor |
 Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V |
auf Bestellung 1531 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2301H | GOFORD Semiconductor |
2301H |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2301H |
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Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
auf Bestellung 1531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 64+ | 0.33 EUR |
| 89+ | 0.24 EUR |
| 103+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 2301H |
|
Hersteller: GOFORD Semiconductor
2301H
2301H
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3226+ | 0.055 EUR |
| 15000+ | 0.049 EUR |