2301H Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 2.8A SOT-23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.062 EUR |
| 15000+ | 0.056 EUR |
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Technische Details 2301H Goford Semiconductor
Description: MOSFET P-CH 30V 2.8A SOT-23, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 890mW (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2301H nach Preis ab 0.13 EUR bis 0.52 EUR
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2301H | Goford Semiconductor |
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 890mW (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2771 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2301H |
|
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 67+ | 0.32 EUR |
| 107+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |