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2301H

2301H Goford Semiconductor

2301H.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.052 EUR
15000+0.047 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2301H Goford Semiconductor

Description: MOSFET P-CH 30V 2.8A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Power Dissipation (Max): 890mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.

Weitere Produktangebote 2301H nach Preis ab 0.11 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2301H 2301H Hersteller : Goford Semiconductor 2301H.pdf Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
auf Bestellung 2771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.27 EUR
107+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
2301-H 2301-H Hersteller : Bourns Inc. 2300_Series.pdf Description: FIXED IND 10UH 20A 5 MOHM TH
Tolerance: ±15%
Packaging: Bulk
Package / Case: Radial, Horizontal (Open)
Size / Dimension: 1.280" Dia (32.51mm)
Mounting Type: Through Hole
Shielding: Unshielded
Type: Toroidal
Operating Temperature: -55°C ~ 105°C
DC Resistance (DCR): 5mOhm Max
Material - Core: Iron Powder
Inductance Frequency - Test: 1 kHz
Height - Seated (Max): 0.650" (16.51mm)
Inductance: 10 µH
Current Rating (Amps): 20 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2301H 2301H Hersteller : Goford Semiconductor 2301H.pdf Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH