2N2221AUB Microchip Technology
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 19.68 EUR |
| 25+ | 19.66 EUR |
| 100+ | 18.2 EUR |
| 250+ | 18.17 EUR |
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Technische Details 2N2221AUB Microchip Technology
Description: TRANS NPN 50V 0.8A 3SMD, Packaging: Bulk, Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: 3-SMD, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2221AUB
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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2N2221AUB | Hersteller : Microchip Technology |
 Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle |
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| 2N2221AUB | Hersteller : Microsemi Corporation |
Description: TRANS NPN 50V 0.8A 3SMD Packaging: Bulk Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 3-SMD Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |