2N2221AUB Microchip Technology
Hersteller: Microchip TechnologyBipolar Transistors - BJT 50V 800mA 650mW 3 Pin CER Small-Signal BJT
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.55 EUR |
| 25+ | 13.50 EUR |
| 100+ | 12.58 EUR |
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Technische Details 2N2221AUB Microchip Technology
Description: TRANS NPN 50V 0.8A 3-SMD, Packaging: Bulk, Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: 3-SMD, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
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2N2221AUB | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle |
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| 2N2221AUB | Hersteller : Microsemi Corporation |
Description: TRANS NPN 50V 0.8A 3-SMD Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 3-SMD Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |