Produkte > MICROSEMI > 2N6768T1

2N6768T1 MICROSEMI


77270-lds-0101-datasheet Hersteller: MICROSEMI
TO-254AA/N-CHANNEL MOSFET 2N6768
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details 2N6768T1 MICROSEMI

Description: MOSFET N-CH 400V 14A TO254AA, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA (Straight Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V, Power Dissipation (Max): 4W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-254AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V.

Weitere Produktangebote 2N6768T1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2N6768T1 Hersteller : Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 400V 14A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Produkt ist nicht verfügbar
2N6768T1 Hersteller : Microchip / Microsemi 77270-lds-0101-datasheet MOSFET N Channel MOSFET
Produkt ist nicht verfügbar