Technische Details 2N6768T1 MICROSEMI
Description: MOSFET N-CH 400V 14A TO254AA, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-254AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-254-3, TO-254AA (Straight Leads), Packaging: Bulk.
Weitere Produktangebote 2N6768T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N6768T1 | Microsemi Corporation |
 Description: MOSFET N-CH 400V 14A TO254AAGate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N6768T1 | Microchip / Microsemi |
MOSFET N Channel MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N6768T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET N-CH 400V 14A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6768T1 |
|
Hersteller: Microchip / Microsemi
MOSFET N Channel MOSFET
MOSFET N Channel MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH