2PB709ASW,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: NOW NEXPERIA 2PB709ASW - SMALL S
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 323217 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13172+ | 0.048 EUR |
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Technische Details 2PB709ASW,115 NXP USA Inc.
Description: NOW NEXPERIA 2PB709ASW - SMALL S, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V, Frequency - Transition: 80MHz, Supplier Device Package: SOT-323, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2PB709ASW,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2PB709ASW,115 | Hersteller : NXP |
Description: NXP - 2PB709ASW,115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: To Be Advised |
auf Bestellung 323217 Stücke: Lieferzeit 14-21 Tag (e) |
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2PB709ASW,115 | Hersteller : NEXPERIA |
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2PB709ASW,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V Frequency - Transition: 80MHz Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Qualification: AEC-Q101 |
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2PB709ASW,115 | Hersteller : Nexperia |
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