2DB1188R-13

2DB1188R-13 Diodes Incorporated


2DB1188P_Q_R.pdf Hersteller: Diodes Incorporated
Description: TRANS PNP 32V 2A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
auf Bestellung 215000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.32 EUR
5000+ 0.31 EUR
12500+ 0.28 EUR
62500+ 0.27 EUR
Mindestbestellmenge: 2500
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Technische Details 2DB1188R-13 Diodes Incorporated

Description: TRANS PNP 32V 2A SOT89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V, Frequency - Transition: 120MHz, Supplier Device Package: SOT-89-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 1 W.

Weitere Produktangebote 2DB1188R-13 nach Preis ab 0.36 EUR bis 0.96 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2DB1188R-13 2DB1188R-13 Hersteller : Diodes Incorporated 2DB1188P_Q_R.pdf Description: TRANS PNP 32V 2A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
auf Bestellung 216423 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
32+ 0.82 EUR
100+ 0.57 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
2DB1188R-13 2DB1188R-13 Hersteller : Diodes Incorporated ds31144-89992.pdf Bipolar Transistors - BJT 1000W -32Vceo
auf Bestellung 546 Stücke:
Lieferzeit 14-28 Tag (e)