2DC4617QLP-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.067 EUR |
| 6000+ | 0.06 EUR |
| 15000+ | 0.053 EUR |
| 30000+ | 0.047 EUR |
| 75000+ | 0.042 EUR |
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Technische Details 2DC4617QLP-7 Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: X1-DFN1006-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2DC4617QLP-7 nach Preis ab 0.055 EUR bis 0.37 EUR
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2DC4617QLP-7 | Diodes Incorporated |
Bipolar Transistors - BJT 250mW 50V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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2DC4617QLP-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A 3DFN Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: X1-DFN1006-3 |
auf Bestellung 98137 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2DC4617QLP-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 250mW 50V
Bipolar Transistors - BJT 250mW 50V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.32 EUR |
| 15+ | 0.19 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.081 EUR |
| 3000+ | 0.055 EUR |
| 2DC4617QLP-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Description: TRANS NPN 50V 0.1A 3DFN
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
auf Bestellung 98137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.079 EUR |