2DC4617QLP-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
| Anzahl | Preis |
|---|---|
| 10000+ | 0.053 EUR |
| 30000+ | 0.047 EUR |
| 50000+ | 0.042 EUR |
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Technische Details 2DC4617QLP-7B Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW.
Weitere Produktangebote 2DC4617QLP-7B nach Preis ab 0.049 EUR bis 0.37 EUR
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2DC4617QLP-7B | Diodes Incorporated |
Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K |
auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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2DC4617QLP-7B | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: X1-DFN1006-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
auf Bestellung 66557 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2DC4617QLP-7B |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K
Bipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 0.27 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.1 EUR |
| 500+ | 0.076 EUR |
| 1000+ | 0.06 EUR |
| 5000+ | 0.058 EUR |
| 10000+ | 0.049 EUR |
| 2DC4617QLP-7B |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
auf Bestellung 66557 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.079 EUR |
| 2000+ | 0.067 EUR |
| 5000+ | 0.06 EUR |