
2ED1322S12MXUMA1 Infineon Technologies

Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-U02
Rise / Fall Time (Typ): 48ns, 48ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.3A, 4.6A
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 6.92 EUR |
10+ | 5.26 EUR |
25+ | 4.84 EUR |
100+ | 4.38 EUR |
250+ | 4.29 EUR |
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Technische Details 2ED1322S12MXUMA1 Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC, Packaging: Tape & Reel (TR), Package / Case: 16-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 13V ~ 20V, Input Type: Non-Inverting, Supplier Device Package: PG-DSO-16-U02, Rise / Fall Time (Typ): 48ns, 48ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, SiC MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 2.3A, 4.6A.
Weitere Produktangebote 2ED1322S12MXUMA1 nach Preis ab 3.87 EUR bis 6.93 EUR
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2ED1322S12MXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2680 Stücke: Lieferzeit 10-14 Tag (e) |
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2ED1322S12MXUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 13V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-U02 Rise / Fall Time (Typ): 48ns, 48ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.3A, 4.6A |
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