2EDL8033G4CXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 2.41 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.23 EUR |
| 2500+ | 1.19 EUR |
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Technische Details 2EDL8033G4CXTMA1 Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VDFN, Packaging: Tape & Reel (TR), Package / Case: 10-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 17V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 120 V, Supplier Device Package: PG-VDSON-10-2, Rise / Fall Time (Typ): 4.6ns, 3.3ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 3A, 6A.
Weitere Produktangebote 2EDL8033G4CXTMA1 nach Preis ab 1.19 EUR bis 2.41 EUR
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2EDL8033G4CXTMA1 | Infineon Technologies |
 Description: IC GATE DRVR HALF-BRIDGE 10VDFNPackaging: Cut Tape (CT) Package / Case: 10-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: PG-VDSON-10-2 Rise / Fall Time (Typ): 4.6ns, 3.3ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 3A, 6A |
auf Bestellung 4473 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2EDL8033G4CXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10VDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-10-2
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
Description: IC GATE DRVR HALF-BRIDGE 10VDFN
Packaging: Cut Tape (CT)
Package / Case: 10-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-VDSON-10-2
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 6A
auf Bestellung 4473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.41 EUR |
| 10+ | 1.76 EUR |
| 25+ | 1.6 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.24 EUR |
| 2500+ | 1.19 EUR |