2N1711S Microchip Technology
Hersteller: Microchip TechnologyBipolar Transistors - BJT 75V 500mA 800mW NPN Short-Lead Power BJT THT
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 39.93 EUR |
| 100+ | 37.08 EUR |
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Technische Details 2N1711S Microchip Technology
Description: TRANS NPN 30V 0.5A TO-39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW.
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| 2N1711S | Hersteller : MOT |
CAN |
auf Bestellung 918 Stücke: Lieferzeit 21-28 Tag (e) |
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2N1711S | Hersteller : Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
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