2N2219AE3 Microchip Technology
Hersteller: Microchip TechnologyBipolar Transistors - BJT 30V 800mA 800mW NPN Lead-Free Small-Signal BJT THT
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.83 EUR |
| 100+ | 11.92 EUR |
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Technische Details 2N2219AE3 Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW.
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| 2N2219AE3 | Hersteller : Microchip Technology | 2N2219AE3 |
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2N2219AE3 | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A TO-39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |