Technische Details 2N2222AUA Microchip Technology
Description: TRANS NPN 50V 0.8A CERAMIC SMD, Packaging: Tray, Package / Case: 4-CLCC, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V, Supplier Device Package: Ceramic SMD, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Weitere Produktangebote 2N2222AUA nach Preis ab 45.16 EUR bis 54.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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2N2222AUA | Microchip Technology |
 Trans GP BJT NPN 50V 0.8A 650mW 4-Pin UA Waffle |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2222AUA | Microchip Technology |
Description: TRANS NPN 50V 0.8A 4-SMD Packaging: Bulk Package / Case: 4-SMD Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 4-SMD Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2222AUA | TT Electronics/Optek Technology |
Description: TRANS NPN 50V 0.8A CERAMIC SMD Packaging: Tray Package / Case: 4-CLCC Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Supplier Device Package: Ceramic SMD Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N2222AUA | Microchip Technology |
Bipolar Transistors - BJT 40V 800mA 500mW Small-Signal BJT SMT |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N2222AUA |
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Hersteller: Microchip Technology
Trans GP BJT NPN 50V 0.8A 650mW 4-Pin UA Waffle
Trans GP BJT NPN 50V 0.8A 650mW 4-Pin UA Waffle
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 47.52 EUR |
| 2N2222AUA |
|
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 48.64 EUR |
| 100+ | 45.16 EUR |
| 2N2222AUA |
|
Hersteller: TT Electronics/Optek Technology
Description: TRANS NPN 50V 0.8A CERAMIC SMD
Packaging: Tray
Package / Case: 4-CLCC
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A CERAMIC SMD
Packaging: Tray
Package / Case: 4-CLCC
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.12 EUR |
| 2N2222AUA |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 40V 800mA 500mW Small-Signal BJT SMT
Bipolar Transistors - BJT 40V 800mA 500mW Small-Signal BJT SMT
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 48.83 EUR |