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Technische Details 2N2270 TIN/LEAD Central Semiconductor
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI, Packaging: Box, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: TO-39, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 1 W.
Weitere Produktangebote 2N2270 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N2270 TIN/LEAD | Central Semiconductor Corp |
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Frequency - Transition: 100MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N2270 TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT NPN 60Vcbo 45Vceo 7.0Vebo 15pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2270 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2270 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 60Vcbo 45Vceo 7.0Vebo 15pF
Bipolar Transistors - BJT NPN 60Vcbo 45Vceo 7.0Vebo 15pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH