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Technische Details 2N2484 TIN/LEAD Central Semiconductor
Description: 60V 50MA 360MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Frequency - Transition: 60MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 360 mW.
Weitere Produktangebote 2N2484 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N2484 TIN/LEAD | Central Semiconductor Corp |
 Description: 60V 50MA 360MW TH TRANSISTOR-SMAPackaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N2484 TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT 60Vcbo 60Vceo 6V 50mA 360mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2484 TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 60V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: 60V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2484 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 60Vcbo 60Vceo 6V 50mA 360mW
Bipolar Transistors - BJT 60Vcbo 60Vceo 6V 50mA 360mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH