Technische Details 2N2857 TIN/LEAD Central Semiconductor
Description: 15V 40MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 12.5dB ~ 19dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Frequency - Transition: 1.9GHz, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: TO-72.
Weitere Produktangebote 2N2857 TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N2857 TIN/LEAD | Central Semiconductor Corp |
Description: 15V 40MA 200MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 12.5dB ~ 19dB Power - Max: 200mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Supplier Device Package: TO-72 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N2857 TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2857 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2857 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH