Technische Details 2N2857UB MICROSEMI
Description: RF TRANS NPN 15V 0.04A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 21dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: UB, Part Status: Obsolete.
Weitere Produktangebote 2N2857UB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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2N2857UB | Microsemi Corporation |
 Description: RF TRANS NPN 15V 0.04A UBPackaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Gain: 21dB Power - Max: 200mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Supplier Device Package: UB Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N2857UB | Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N2857UB |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 0.04A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 21dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: UB
Part Status: Obsolete
Description: RF TRANS NPN 15V 0.04A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 21dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: UB
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N2857UB |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH