2N2879 Microchip Technology
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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Technische Details 2N2879 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-111-4, Stud, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Supplier Device Package: TO-111, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 30 W.
Weitere Produktangebote 2N2879
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2N2879 | Hersteller : Microchip Technology | Bipolar Transistors - BJT NPN Transistor |
Produkt ist nicht verfügbar |