Technische Details 2N2903A MOTOROLA
Description: TRANS 2NPN 50MA 30V TO78-6, Supplier Device Package: TO-78-6, Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 30V, Current - Collector (Ic) (Max): 50mA, Power - Max: 1.2W, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N2903A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2N2903A | Central Semiconductor Corp |
 Description: TRANS 2NPN 50MA 30V TO78-6Supplier Device Package: TO-78-6 Frequency - Transition: 60MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA Voltage - Collector Emitter Breakdown (Max): 30V Current - Collector (Ic) (Max): 50mA Power - Max: 1.2W Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
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Im Einkaufswagen Stück im Wert von UAH |
| 2N2903A | Microchip Technology |
Bipolar Transistors - BJT Dual Small-Signal BJT |
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Im Einkaufswagen Stück im Wert von UAH |
| 2N2903A |
|
Hersteller: Central Semiconductor Corp
Description: TRANS 2NPN 50MA 30V TO78-6
Supplier Device Package: TO-78-6
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 50mA
Power - Max: 1.2W
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Description: TRANS 2NPN 50MA 30V TO78-6
Supplier Device Package: TO-78-6
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 1mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 50mA
Power - Max: 1.2W
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2903A |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT Dual Small-Signal BJT
Bipolar Transistors - BJT Dual Small-Signal BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH