Technische Details 2N2905AE3 Microchip Technology
Description: TRANS PNP 60V 0.6A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote 2N2905AE3 nach Preis ab 17.46 EUR bis 18.11 EUR
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2N2905AE3 | Microchip Technology |
 Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39 Bag |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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2N2905AE3 | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2905AE3 | Microchip Technology |
Bipolar Transistors - BJT 60V 600mA 800mW NPN Lead-Free Small-Signal BJT THT |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N2905AE3 |
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Hersteller: Microchip Technology
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39 Bag
Trans GP BJT PNP 60V 0.6A 800mW 3-Pin TO-39 Bag
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 17.46 EUR |
| 2N2905AE3 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.86 EUR |
| 2N2905AE3 |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 60V 600mA 800mW NPN Lead-Free Small-Signal BJT THT
Bipolar Transistors - BJT 60V 600mA 800mW NPN Lead-Free Small-Signal BJT THT
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.11 EUR |