2N2919A Solid State Inc.
Hersteller: Solid State Inc.
Description: TO 78 DUAL SILICON TRANSISTORS N
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78
Part Status: Active
Description: TO 78 DUAL SILICON TRANSISTORS N
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 14.86 EUR |
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Technische Details 2N2919A Solid State Inc.
Description: TO 78 DUAL SILICON TRANSISTORS N, Packaging: Bulk, Package / Case: TO-78-6 Metal Can, Mounting Type: Through Hole, Transistor Type: 2 NPN (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 2nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: TO-78, Part Status: Active.
Weitere Produktangebote 2N2919A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2N2919A | Hersteller : MOTOROLA |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |