2N3415 TRA TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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Technische Details 2N3415 TRA TIN/LEAD Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N3415 TRA TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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2N3415 TRA TIN/LEAD | Central Semiconductor |
 Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 5.0Vebo 500mA 625mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N3415 TRA TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 5.0Vebo 500mA 625mW
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 5.0Vebo 500mA 625mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH