Technische Details 2N3501L MOTOROLA
Description: TRANS NPN 150V 0.3A TO5, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: TO-5, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N3501L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N3501L | Hersteller : Microchip Technology |
Description: TRANS NPN 150V 0.3A TO5Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: TO-5 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
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2N3501L | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
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2N3501L | Hersteller : Microchip Technology |
Bipolar Transistors - BJT 150V 300mA 1W NPN Long-Lead Small-Signal BJT |
Produkt ist nicht verfügbar |


