2N3505 PBFREE

2N3505 PBFREE Central Semiconductor


2500339836309919get_document.phpcmp1mergetypepdmergepathpdpdf_idlssgp056.pdf Hersteller: Central Semiconductor
Trans GP BJT PNP 60V 3-Pin TO-18
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Technische Details 2N3505 PBFREE Central Semiconductor

Description: 60V 600MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 400 mW.

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2N3505 PBFREE 2N3505 PBFREE Hersteller : Central Semiconductor Corp LSSGP056.PDF Description: 60V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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2N3505 PBFREE 2N3505 PBFREE Hersteller : Central Semiconductor get_document-1518542.pdf Bipolar Transistors - BJT 60Vcbo 60Vceo 5.0Vebo 300mA 8.0pF
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