Technische Details 2N3646 MOTOROLA
Description: TRANS NPN 15V 0.2A TO106, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 15 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: TO-106, Frequency - Transition: 350MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-106-3 Domed, Packaging: Bulk.
Weitere Produktangebote 2N3646
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N3646 | Central Semiconductor Corp |
Description: TRANS NPN 15V 0.2A TO106 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: TO-106 Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-106-3 Domed Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N3646 |
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 15V 0.2A TO106
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-106
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Packaging: Bulk
Description: TRANS NPN 15V 0.2A TO106
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-106
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
