Technische Details 2N3737 MOTOROLA
Description: TRANS NPN 40V 1.5A TO-46-3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: TO-46-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N3737
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N3737 | Microchip Technology |
 Description: TRANS NPN 40V 1.5A TO-46-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: TO-46-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
2N3737 | Microchip Technology |
Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N3737 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 40V 1.5A TO-46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3737 |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT BJTs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH