2N3752 General Semiconductor
Hersteller: General Semiconductor
Description: TRANS 80V 5A TO111
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-111
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Mounting Type: Stud Mount
Package / Case: TO-111-4, Stud
Packaging: Bulk
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Technische Details 2N3752 General Semiconductor
Description: TRANS 80V 5A TO111, Power - Max: 30 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-111, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A, Mounting Type: Stud Mount, Package / Case: TO-111-4, Stud, Packaging: Bulk.
Weitere Produktangebote 2N3752
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2N3752 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |