Technische Details 2N3810L Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO-78, Supplier Device Package: TO-78-6, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 50mA, Power - Max: 350mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N3810L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| 2N3810L | MICROSEMI |
 TO78/PNP SILICON DUAL TRANSISTORS 2N3810Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N3810L | Microchip Technology |
Description: TRANS 2PNP 60V 0.05A TO-78 Supplier Device Package: TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
2N3810L | Microchip Technology |
Bipolar Transistors - BJT 60V 50mA 350mW Long-Lead Dual Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N3810L |
|
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO-78
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Description: TRANS 2PNP 60V 0.05A TO-78
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N3810L |
|
Hersteller: Microchip Technology
Bipolar Transistors - BJT 60V 50mA 350mW Long-Lead Dual Small-Signal BJT THT
Bipolar Transistors - BJT 60V 50mA 350mW Long-Lead Dual Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH