2N3879A Microchip Technology

Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A, Current - Collector Cutoff (Max): 25mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 75 V, Power - Max: 35 W.