Technische Details 2N4236L MOTOROLA
Description: POWER BJT, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote 2N4236L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N4236L | Microchip Technology |
Description: POWER BJT Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4236L | Microchip Technology | Bipolar Transistors - BJT 80V Long-Lead PNP Power BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4236L |
Hersteller: Microchip Technology
Description: POWER BJT
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: POWER BJT
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N4236L |
Hersteller: Microchip Technology
Bipolar Transistors - BJT 80V Long-Lead PNP Power BJT THT
Bipolar Transistors - BJT 80V Long-Lead PNP Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH