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Technische Details 2N4402 APM TIN/LEAD Central Semiconductor
Description: 40V 600MA 625MW TH TRANSISTOR-SM, Power - Max: 625 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: TO-92-3, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Box (TB).
Weitere Produktangebote 2N4402 APM TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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2N4402 APM TIN/LEAD | Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: TO-92-3 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4402 APM TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4402 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N4402 APM TIN/LEAD |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
Bipolar Transistors - BJT 40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH