2N4405 TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 80V 1A 1.25W TH TRANSISTOR-SMALL
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Current - Collector Cutoff (Max): 25nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
Power - Max: 1.25 W
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Technische Details 2N4405 TIN/LEAD Central Semiconductor Corp
Description: 80V 1A 1.25W TH TRANSISTOR-SMALL, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-39, Frequency - Transition: 600MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V, Current - Collector Cutoff (Max): 25nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Box, Power - Max: 1.25 W.
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|---|---|---|---|---|---|
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2N4405 TIN/LEAD | Central Semiconductor |
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 1A 1.25W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4405 TIN/LEAD |
|
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 1A 1.25W
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 1A 1.25W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH